型号：RT9014A-GKPQW；Package：WDFN-103x3；Ultra Low Noise 300mA Dual LDO Regulator with POR, NMOS Driver and Requiring No Bypass Capacitor

General Description RT9014/A is a dual channel, low noise, and low dropout with the sourcing ability up to 300mA, an open drain driver and power-on reset function. The open-drain output is capable of sinking 150mA for LED backlighting applications. Features • Wide Operating Voltage Rang

文件：391.03 Kbytes 页数：12 Pages

RichTek

立锜科技

型号：RT9198-33PB；Package：SOT-25；300mA, Low Noise, Ultra-Fast CMOS LDO Regulator

文件：251.14 Kbytes 页数：15 Pages

RichTek

立锜科技

型号：RT9198-33PB；Package：SOT-25；300mA, Low Noise, Ultra-Fast CMOS LDO Regulator

文件：239.53 Kbytes 页数：18 Pages

RichTek

立锜科技

型号：DL-100-7-KER；Position Sensing Photodiodes Special characteristics

[Pacific Silicon Sensor, Inc.] Special characteristics: dual-axis, duo-lateral PSD active area 10 x 10 mm high position resolution and high linearity

文件：217.02 Kbytes 页数：2 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

型号：DL-3038-011；Index Guided AlGalnP Laser Diode

Overview DL-3038-011 is index guided 635 nm (Typ.) AlGaInP laser diode. The low threshold current and short wavelength are achieved by a strained multiple quantum well active layer. The lasing wavelength is the same as He-Ne gas lasers. DL-3038-011 is suitable for laser pointers. Features • S

文件：77.07 Kbytes 页数：3 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

型号：DL-3038-023；AlGalnP Laser Diode?

Overview DL-3038-023 is 635 nm (Typ.) AlGaInP laser diode with low threshold current. The low threshold current and short wavelength are achieved by use of a strained multiple quantum well active layer. The lasing wavelength is 635 nm which is 8 times brighter than 670 nm lasers. DL-3038-023 is s

文件：77.9 Kbytes 页数：3 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

型号：DL-3038-033；Index Guided AlGalnP Laser Diode?

Overview DL-3038-033 is index guided 635 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. Low threshold current and short wavelength are achieved by a strained multiple quantum well active layer. The lasing wavelength is 635 nm which is 8 times brighter th

文件：80.02 Kbytes 页数：3 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

型号：DL-3038-034；RED LASER DIODE

Features • Short wavelength : 635 nm (Typ.) • Low threshold current : Ith = 30 mA (Typ.) • High operating temperature : 5 mW at 50°C • Low operating voltage : Vop = 2.2 V (Typ.) Applications • Bar-code scanner • Line marker, Leveler

文件：50.58 Kbytes 页数：2 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

型号：DL-3038-041；Index Guided AlGalnP Laser Diode?

Index Guided AlGalnP Laser Diode

文件：80.71 Kbytes 页数：3 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

型号：DL-3039-011；Index Guided AlGalnP Laser Diode?

Overview DL-3039-011 is 670 nm (Typ.) index guided AlGaInP laser diode with low threshold current and high operating temperature. The low threshold current and short wavelength are achieved by use of a strained multiple quantum well active layer. DL-3039-011 is suitable for applications such as

文件：79.21 Kbytes 页数：3 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社