包装：散装 类别：套件 电路保护套件 - 保险丝 描述：FUSE KIT BRD MNT 30A/60A

Eaton - Bussmann Electrical Division

NPN Silicon Transistor

Features · Extremely low collector-to-emitter saturation voltage( VCE(SAT) = 0.1V Typ. @IC/IB=100mA/10mA) · Suitable for low voltage large current drivers · Complementary pair with DP030 · Switching Application

文件：61.91 Kbytes 页数：3 Pages

AUK

Extremely low collector-to-emitter saturation voltage

Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.1V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030 • Switching Application

文件：193.39 Kbytes 页数：4 Pages

KODENSHI

可天士

NPN Silicon Transistor

Descriptions • Switching application • Interface circuit and driver circuit application Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • High packing density

文件：56.65 Kbytes 页数：3 Pages

AUK