丝印：DGTT；Package：DO-214AB；3000W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low induct0ance 3000W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature sol

文件：2.89053 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：DGTA；Package：DO-214AB；10 To 78V 3000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 3000W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01% . High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response

文件：2.88701 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：DGT*；Package：SOT-89；NPN Transistors

文件：685.11 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：DGTH；Package：SMC；Automotive and High Reliability TVS Diodes

文件：1.08668 Mbytes 页数：5 Pages

YINT

音特电子

Gate Turn-off Thyristor

Dynex

丹尼克斯

Reverse Blocking Gate Turn-off Thyristor

Dynex

丹尼克斯

Reverse Blocking Gate Turn-off Thyristor Target Information

Dynex

丹尼克斯

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V-X TO247 TUBE 0.45K

DIODES

美台半导体

Package：TO-220-3 全封装，隔离接片；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT600V-XITO-220AB

DIODES

美台半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V-X TO247 TUBE 0.45K

DIODES

美台半导体