丝印：DGD0579U；Package：W-DFN3030-10；HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN DFN3030-10

Features - 100V Floating High-Side Driver - Drives Two N-Channel MOSFETs in A Half-Bridge Configuration - 1.5A Source / 2.5A Sink Output Current Capability - Internal Bootstrap Diode - Undervoltage Lockout for High-Side and Low-Side Drivers - Delay Matching Maxmimum of 10ns - Propagation De

文件：719.42 Kbytes 页数：11 Pages

DIODES

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丝印：DGD0590A；Package：V-QFN3030-8；HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN V-QFN3030-8

Features • 40V Floating High-Side Driver • Low VCC Operating Voltage: 4.5V to 5.5V • Drives Two N-Channel Logic Level MOSFETs in a Half-Bridge Configuration • High-Side 1.0A Source / 1.0A Sink and Low-Side 1.0A Source / 3.0A Sink Output Current Capability • Internal Bootstrap Diode Included

文件：745.76 Kbytes 页数：11 Pages

DIODES

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丝印：DGD0636M；Package：SO-28；3-PHASE HALF-BRIDGE GATE DRIVER IN SO28

Features • Three Floating High-Side Drivers in Bootstrap Operation to 100V • 200mA Source / 350mA Sink Output Current Capability • Outputs Tolerant to Negative Transients, dV/dt Immune • Logic Input 3.3V Capability • Internal Deadtime of 290ns to Protect MOSFETs and IGBTs • Matched Prop Dela

文件：665.81 Kbytes 页数：12 Pages

DIODES

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丝印：DGD1003；Package：V-DFN3035-8；HALF-BRIDGE GATE DRIVER IN V-DFN3035-8

Features Floating High-Side Driver in Bootstrap Operation to 150V Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuration 290mA Source/600mA Sink Output Current Capability Outputs Tolerant to Negative Transients Internal Dead Time of 420ns to Protect MOSFETs Wide Low Side Gate

文件：767.55 Kbytes 页数：11 Pages

DIODES

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丝印：DGD1504；Package：SO-8；250V HALF-BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 250V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 290mA Source/600mA Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 430ns to Protect MOSFETs - Wide Low

文件：1.17898 Mbytes 页数：11 Pages

DIODES

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丝印：DGD2003；Package：SO-8；HALF-BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 200V - Drives Two N-Channel MOSFETs in a Half-Bridge Configuration - 290mA Source/600mA Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 420ns to Protect MOSFETs - Wide Low Side Gat

文件：741.59 Kbytes 页数：11 Pages

DIODES

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丝印：DGD2005；Package：SO-8；HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 200V - Drives Two N-Channel MOSFETs in Half Bridge Configuation - 290mA Source/600mA Sink Output Current Capability - Outputs Tolerant to Negative Transients - Wide Logic and Low-Side Gate Driver Supply Voltage:10V to 20V - Logic

文件：765.81 Kbytes 页数：11 Pages

DIODES

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丝印：DGD21012；Package：SO-8；HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in High-Side / Low-Side Configuation - Outputs Tolerant to Negative Transients - Wide Low-Side Gate Driver and Logic Supply: 10V to 20V - Logic Inputs CMOS and TTL Compatible (Down to 3

文件：1.2792 Mbytes 页数：11 Pages

DIODES

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丝印：DGD2103M；Package：SO-8；HALF-BRIDGE GATE DRIVER IN SO-8

Features Floating High-Side Driver in Bootstrap Operation to 600V Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuration Designed for Enhanced Performance in Noisy Motor Applications 290mA Source/600mA Sink Output Current Capability Outputs Tolerant to Negative Transients Inte

文件：897.23 Kbytes 页数：11 Pages

DIODES

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丝印：DGD2104M；Package：SO-8；HALF-BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 290mA Source / 600mA Sink Output Current Capability - Designed for Enhanced Performance in Noisy Motor Applications - Outputs Tolerant to Negative Trans

文件：880.2 Kbytes 页数：11 Pages

DIODES

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