DG75A08TDFS芯片丝印丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
DG75A08TDFS	文件：580.1 Kbytes Page：12 Pages	丝印：DG75A08TDFS；Package：TO-247PLUS-4L；750V/75A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as solar power. Features  Low VCE(sat) Fast IGBT technology  Low switching loss  Maximum junction temperature 175oC  VCE(sat) wit 文件：580.1 Kbytes 页数：12 Pages	STARPOWER 斯达半导体	STARPOWER
DG75A08TDFS	文件：580.1 Kbytes Page：12 Pages	丝印：DG75A08TDFS；Package：TO-247PLUS-4L；750V/75A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as solar power. Features  Low VCE(sat) Fast IGBT technology  Low switching loss  Maximum junction temperature 175oC  VCE(sat) wit 文件：580.1 Kbytes 页数：12 Pages	STARPOWER 斯达半导体	STARPOWER

更多DG75A08TDFS供应商更新时间2026-1-23 11:09:00