1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

DESCRIPTION The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES ● Fast Switching— tON: 12 ns ● Low Charge Injection:
2 pC ● Wide Bandwidth: 500 MHz ● 5-V CMOS L

文件：194.23 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES • Halogen-free according to IEC 61249-2-21 Definition • Low charge injection (1 pC typ.) • Leakage current

文件：327.35 Kbytes 页数：17 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Speed, Low-Glitch D/CMOS Analog Switches

DESCRIPTION The DG611, DG612, DG613 feature high-speed low capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5

文件：91.09 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Speed, Low-Glitch D/CMOS Analog Switches

DESCRIPTION The DG611, DG612, DG613 feature high-speed low capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5

文件：91.09 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Speed, Low-Glitch D/CMOS Analog Switches

DESCRIPTION The DG611, DG612, DG613 feature high-speed low capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5

文件：91.09 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Speed, Low-Glitch D/CMOS Analog Switches

DESCRIPTION The DG611, DG612, DG613 feature high-speed low capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5

文件：91.09 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Speed, Low-Glitch D/CMOS Analog Switches

DESCRIPTION The DG611, DG612, DG613 feature high-speed low capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5

文件：91.09 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Speed, Low-Glitch D/CMOS Analog Switches

FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5 V CMOS logic compatible • Low RDS(on): 18  • Low quiescent power : 1.2 nW • Single supply operation BENEFITS • Improved data throughput • Minimal switching transients • Improved system

文件：187.35 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Speed, Low-Glitch D/CMOS Analog Switches

FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5 V CMOS logic compatible • Low RDS(on): 18  • Low quiescent power : 1.2 nW • Single supply operation BENEFITS • Improved data throughput • Minimal switching transients • Improved system

文件：187.35 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Speed, Low-Glitch D/CMOS Analog Switches

FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5 V CMOS logic compatible • Low RDS(on): 18  • Low quiescent power : 1.2 nW • Single supply operation BENEFITS • Improved data throughput • Minimal switching transients • Improved system

文件：187.35 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司