High-Speed, Low-Glitch D/CMOS Analog Switches

FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5 V CMOS logic compatible • Low RDS(on): 18  • Low quiescent power : 1.2 nW • Single supply operation BENEFITS • Improved data throughput • Minimal switching transients • Improved system

文件：187.35 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Speed, Low-Glitch D/CMOS Analog Switches

FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5 V CMOS logic compatible • Low RDS(on): 18  • Low quiescent power : 1.2 nW • Single supply operation BENEFITS • Improved data throughput • Minimal switching transients • Improved system

文件：187.35 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Speed, Low-Glitch D/CMOS Analog Switches

DESCRIPTION The DG611, DG612, DG613 feature high-speed low capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5

文件：91.09 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Speed, Low-Glitch D/CMOS Analog Switches

FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5 V CMOS logic compatible • Low RDS(on): 18  • Low quiescent power : 1.2 nW • Single supply operation BENEFITS • Improved data throughput • Minimal switching transients • Improved system

文件：187.35 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Speed, Low-Glitch D/CMOS Analog Switches

FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5 V CMOS logic compatible • Low RDS(on): 18  • Low quiescent power : 1.2 nW • Single supply operation BENEFITS • Improved data throughput • Minimal switching transients • Improved system

文件：187.35 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

High-Speed, Low-Glitch D/CMOS Analog Switches

FEATURES • Fast switching - tON: 12 ns • Low charge injection: ± 2 pC • Wide bandwidth: 500 MHz • 5 V CMOS logic compatible • Low RDS(on): 18  • Low quiescent power : 1.2 nW • Single supply operation BENEFITS • Improved data throughput • Minimal switching transients • Improved system

文件：187.35 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES • 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply • Low charge injection (1.4 pC typ.) • Leakage current

文件：441.38 Kbytes 页数：18 Pages

VISHAYVishay Siliconix

威世威世科技公司

1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES • 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply • Low charge injection (1.4 pC typ.) • Leakage current

文件：441.38 Kbytes 页数：18 Pages

VISHAYVishay Siliconix

威世威世科技公司

1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES • 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply • Low charge injection (1.4 pC typ.) • Leakage current

文件：441.38 Kbytes 页数：18 Pages

VISHAYVishay Siliconix

威世威世科技公司

1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES • 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply • Low charge injection (1.4 pC typ.) • Leakage current

文件：441.38 Kbytes 页数：18 Pages

VISHAYVishay Siliconix

威世威世科技公司