DFBR030U3LP中文资料mosfet-plus-sbr数据手册Diodes规格书

描述 Description

Dual 30V N-Channel MOSFETs with Dual 3.0A Super Barrier

Rectifier Diodes together packaged in a 4.0 x 4.0 x 0.6 mm

DFN Package

特性 Features

1. For two N-channel MOSFET transistors:

Drain-Source Breakdown Voltage: 30V

Maximum Drain Current: 3.2A

2. For two Super Barrier Rectifier Diodes:

Forward Voltage Drop VF less than 0.42V

Maximum leakage current IR is less than 400 uA at 25 oC

3. For the Rectifier as a whole:

Rectifier Forward Voltage is less than 0.56V.

Rectifier leakage and reverse leakage current are less than 1

mA.

应用 Application

Wireless Charging, AC-DC Rectification, Optimized for Power

Management Applications for Portable Products.

简介

DFBR030U3LP属于分立半导体产品的二极管-桥式整流器。由制造生产的DFBR030U3LP二极管 - 桥式整流器二极管桥式整流器指的是按桥电路配置排列二极管，以用于将交流电 (AC) 输入转换为直流电 (DC) 输出。这些组件可以采用底座、DIN 导轨、表面或通孔安装，可按照单相或三相二极管类型、正向电压额定值、平均整流电流和技术进行选择。