DF200R07W2H3B77BPSA1分立半导体产品的晶体管-IGBT-模块规格书PDF中文资料

DF200R07W2H3B77BPSA1属于分立半导体产品的晶体管-IGBT-模块。由英飞凌科技股份公司制造生产的DF200R07W2H3B77BPSA1晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。

特性 Features

• Electrical features

- VCES = 650 V

- IC nom = 100 A / ICRM = 200 A

- Increased blocking voltage capability up to 650 V

- Low inductive design

- Low switching losses

- Low VCE,sat

• Mechanical features

- Al2O3

substrate with low thermal resistance

- Compact design

- PressFIT contact technology

- Rugged mounting due to integrated mounting cl

Potential applications

• Three-level applications

• Motor drives

• Solar applications

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068