TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose amplifier applications.

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DCCOM

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TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC Components

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6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)

The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon photodarlington detectors. The chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments. They are best suited for use in a

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MOTOROLA

摩托罗拉

QPSK transmitter

文件：125.43 Kbytes 页数：28 Pages

PHI

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TDA8046H

文件：127.21 Kbytes 页数：24 Pages

PHI

PHI