包装：袋 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD DEMO FOR LTC5507ES6

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亚德诺

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Very low equivalent on-resistance; RCE(sat) 175mΩ at 1A

文件：47.76 Kbytes 页数：1 Pages

ZETEX

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Features • BVCEO > 30V • IC = 1A high Continuous Collector Current • ICM Up to 4A Peak Pulse Current • Excellent hFE Characteristics Up To 4A • RSAT = 175mΩ @ 1A for a Low Equivalent On-Resistance • Low Saturation Voltage

文件：54.77 Kbytes 页数：1 Pages

DIODES

美台半导体

Medium Power Transistor

Features ● Very low equivalent on-resistance

文件：35.51 Kbytes 页数：1 Pages

KEXIN

科信电子