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SMAJ6.0CA-TR

丝印:DBB;Package:DO-214AC;Transil™

Features ■ Peak pulse power: – 400 W (10/1000 μs) – 2.3 kW (8/20 μs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 μA at 25 °C – 1 μA at 85 °C ■ Operating Tj max: 150 °C ■ High power capability at Tj max: – 270 W (10/1

文件:148.15 Kbytes 页数:10 Pages

STMICROELECTRONICS

意法半导体

ISL9011IRBCZ

丝印:DBBH;Package:10Ld3x3DFN;Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9011 is a high performance dual LDO capable of sourcing 150mA current from Channel 1 and 300mA from Channel 2. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. A refer

文件:548.8 Kbytes 页数:11 Pages

RENESAS

瑞萨

ISL9011IRBLZ

丝印:DBBF;Package:10Ld3x3DFN;Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9011 is a high performance dual LDO capable of sourcing 150mA current from Channel 1 and 300mA from Channel 2. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. A refer

文件:548.8 Kbytes 页数:11 Pages

RENESAS

瑞萨

ISL9014IRBJZ

丝印:DBBS;Package:10Ld3x3DFN;Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9014 is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two hi

文件:550.51 Kbytes 页数:11 Pages

RENESAS

瑞萨

ISL9014IRFJZ

丝印:DBBN;Package:10Ld3x3DFN;Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9014 is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two hi

文件:550.51 Kbytes 页数:11 Pages

RENESAS

瑞萨

ISL9014IRGCZ

丝印:DBBR;Package:10Ld3x3DFN;Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9014 is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two hi

文件:550.51 Kbytes 页数:11 Pages

RENESAS

瑞萨

ISL9014IRJCZ

丝印:DBBP;Package:10Ld3x3DFN;Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9014 is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two hi

文件:550.51 Kbytes 页数:11 Pages

RENESAS

瑞萨

ISL9014IRJMZ

丝印:DBBT;Package:10Ld3x3DFN;Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9014 is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two hi

文件:550.51 Kbytes 页数:11 Pages

RENESAS

瑞萨

ISL9014IRKFZ

丝印:DBBM;Package:10Ld3x3DFN;Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9014 is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two hi

文件:550.51 Kbytes 页数:11 Pages

RENESAS

瑞萨

ISL9014IRKKZ

丝印:DBBW;Package:10Ld3x3DFN;Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9014 is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two hi

文件:550.51 Kbytes 页数:11 Pages

RENESAS

瑞萨

详细参数

  • 型号:

    DBB

  • 功能描述:

    TVS 二极管 - 瞬态电压抑制器 400W 6.0V Bidirect

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 极性:

    Bidirectional

  • 击穿电压:

    58.9 V

  • 钳位电压:

    77.4 V

  • 峰值浪涌电流:

    38.8 A

  • 封装/箱体:

    DO-214AB

  • 最小工作温度:

    - 55 C

  • 最大工作温度:

    + 150 C

供应商型号品牌批号封装库存备注价格
STM
23+
SMA
5000
原装现货支持送检
询价
ST
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
24+
3000
自己现货
询价
ST
24+
DO-214AC(SMA
6868
原装现货,可开13%税票
询价
ST
08+
DO-214AC
65400
绝对全新原装强调只做全新原装现
询价
ST
1716+
?
7500
只做原装进口,假一罚十
询价
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
询价
STM
23+
NA
18216
专做原装正品,假一罚百!
询价
ST
25+23+
SMA
22037
绝对原装正品全新进口深圳现货
询价
ST
19+
SMA
8650
原装正品,现货热卖
询价
更多DBB供应商 更新时间2025-9-21 15:08:00