DAC1280IPW.A

丝印：DAC1280；Package：TSSOP；Low Distortion Digital-to-Analog Converter for Seismic Monitoring

1FEATURES 2•OutstandingPerformance: –THD:–125dB –SNR:120dB(413HzBW,Gain=1/1) –GainError:0.1% •PinOperation:NoRegisterstoProgram •Gain:1/1to1/64 •SYNCInputforPhaseControl •Power-DownMode •LowPower:18mW •AnalogSupply:+5Vor±2.5V •DigitalSupply:

DAC1280IPWR

LowDistortionDigital-to-AnalogConverterforSeismicMonitoring

DAC1280IPWR

LowDistortionDigital-to-AnalogConverterforSeismicMonitoring

1FEATURES 2•OutstandingPerformance: –THD:–125dB –SNR:120dB(413HzBW,Gain=1/1) –GainError:0.1% •PinOperation:NoRegisterstoProgram •Gain:1/1to1/64 •SYNCInputforPhaseControl •Power-DownMode •LowPower:18mW •AnalogSupply:+5Vor±2.5V •DigitalSupply:

DAC1280IPWR.A

LowDistortionDigital-to-AnalogConverterforSeismicMonitoring

1FEATURES 2•OutstandingPerformance: –THD:–125dB –SNR:120dB(413HzBW,Gain=1/1) –GainError:0.1% •PinOperation:NoRegisterstoProgram •Gain:1/1to1/64 •SYNCInputforPhaseControl •Power-DownMode •LowPower:18mW •AnalogSupply:+5Vor±2.5V •DigitalSupply:

DQ1280

SMDShieldedBasePlatePowerInductorSeries

DQ1280

SMDShieldedBasePlatePowerInductorSeries;PartNumberingSequence

DQ1280

SMDShieldedBasePlatePowerInductorSeries

ENA1280

NPNEpitaxialPlanarSiliconTransistorHighFrequencyLow-NoiseAmplifier

NPNEpitaxialPlanarSiliconTransistor Features •Low-noiseuse:NF=1.2dBtyp(f=1GHz) •Highcut-offfrequency:fT=16GHztyp(VCE=5V) •Highgain:|S21e|2=17.5dBtyp(f=1GHz) •Halogenfreecompliance

ENA1280A

NPNEpitaxialPlanarSiliconTransistorHighFrequencyLow-NoiseAmplifier

EPG1280

8BITUCBASEDDATAPROCESSORICFORUSEONPAIMTOPDEVICES

ELANRISCII™series 8BITUCBASEDDATAPROCESSORICFORUSEONPAIMTOPDEVICES