首页 >DAC0808LCCN>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
P-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheVP0808Enhancement-mode(normally-off) transistorusesaverticalDMOSstructureanda well-proven,silicon-gatemanufacturingprocess.This combinationproducesadevicewiththepower handlingcapabilitiesofbipolartransistorsandthehigh inputimpedanceandposi | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | ||
P-ChannelEnhancement-ModeVerticalDMOSFETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
P-ChannelEnhancement-ModeP-ChannelEnhancement-Mode GeneralDescription TheSupertexVP0808isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeMOSFETTransistors Features ●High-SideSwitching ●LowCm-Resistance:2.5Q ●ModerateThreshold:-3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuff | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
P-ChannelEnhancement-ModeMOSFETTransistors Features ●High-SideSwitching ●LowOn-Resistance:2.5Ω ●ModerateThreshold:–3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuf | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
P-ChannelEnhancement-ModeD-MOSPOWERFETs [TOPAZSEMICONDUCTOR] FEATURES ■GateStand-offVoltage,±40Vmin. ■LowOutputandTransferCapacitances ■N-ChannelComplementsAvailable APPLICATIONS ■MotorControls ■LogicInterface ■PulseAmplifiers | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
P-ChannelEnhancement-ModeMOSFETTransistors Features ●High-SideSwitching ●LowOn-Resistance:2.5Ω ●ModerateThreshold:–3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuf | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
P-ChannelEnhancement-ModeD-MOSPOWERFETs [TOPAZSEMICONDUCTOR] FEATURES ■GateStand-offVoltage,±40Vmin. ■LowOutputandTransferCapacitances ■N-ChannelComplementsAvailable APPLICATIONS ■MotorControls ■LogicInterface ■PulseAmplifiers | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeMOSFETTransistors Features ●High-SideSwitching ●LowCm-Resistance:2.5Q ●ModerateThreshold:-3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuff | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
P-ChannelEnhancement-ModeP-ChannelEnhancement-Mode GeneralDescription TheSupertexVP0808isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheVP0808Enhancement-mode(normally-off) transistorusesaverticalDMOSstructureanda well-proven,silicon-gatemanufacturingprocess.This combinationproducesadevicewiththepower handlingcapabilitiesofbipolartransistorsandthehigh inputimpedanceandposi | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | ||
P-ChannelEnhancement-ModeMOSFETTransistors Features ●High-SideSwitching ●LowCm-Resistance:2.5Q ●ModerateThreshold:-3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuff | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
P-ChannelEnhancement-ModeD-MOSPOWERFETs [TOPAZSEMICONDUCTOR] FEATURES ■GateStand-offVoltage,±40Vmin. ■LowOutputandTransferCapacitances ■N-ChannelComplementsAvailable APPLICATIONS ■MotorControls ■LogicInterface ■PulseAmplifiers | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
P-ChannelEnhancement-ModeMOSFETTransistors Features ●High-SideSwitching ●LowOn-Resistance:2.5Ω ●ModerateThreshold:–3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuf | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
AllDimensionInMM | E-SWITCH E-Switch, Inc. | E-SWITCH | ||
ALLDIMENSIONSINMM[INCH]. | E-SWITCH E-Switch, Inc. | E-SWITCH | ||
HIGHFREQUENCYPLANARTRANSFORMER | XFMRS XFMRS，Inc. | XFMRS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NS |
21+ROHS |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
N |
05+ |
原厂原装 |
4365 |
只做全新原装真实现货供应 |
询价 | ||
NS |
22+ |
SOP |
3378 |
绝对原装公司现货供应!价格优势 |
询价 | ||
NS |
CDIP |
428 |
询价 | ||||
NS |
22+ |
6980 |
原装现货,可开13%税票 |
询价 | |||
NS |
23+ |
CDIP |
1145 |
全新原装现货 |
询价 | ||
NS |
DIP |
550 |
价格优势!军工IC一级分销商!可开增值税发票! |
询价 | |||
国半 |
18 |
DIP |
200 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
NS |
18+ |
DIP |
14745 |
全新原装现货,可出样品,可开增值税发票 |
询价 | ||
NSC |
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 |
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