丝印：D99；Package：SOT23；P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability

文件：445.43 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：D99；Package：SOT23；P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability

文件：445.43 Kbytes 页数：6 Pages

DIODES

美台半导体

RUGGEDIZED 5.6 DISPLAY HEAD ASSEMBLY w/ BACKLIGHT (320 x 234)

OVERVEIW White Electronic Designs 5.6 sunlight readable display head assembly with backlight is ruggedized for harsh environments. Off-the-shelf AMLCD technology combined with proven ruggedization techniques provides a cost effective, multifunctional display assembly for commercial, industrial, a

文件：308.25 Kbytes 页数：10 Pages

WEDC

RF LDMOS Wideband Integrated Power Amplifiers

文件：466.54 Kbytes 页数：13 Pages

恩XP

Ruggedized 5.0 Display Head Assembly with Backlight

文件：322.61 Kbytes 页数：10 Pages

WEDC

Silicon NPN Power Transistors

文件：191.39 Kbytes 页数：4 Pages

SAVANTIC

KTD998, D998 / TRIPLE DIFFUSED NPN TRANSISTOR

* Recommended for 45ᴕ50W Audio Frequency Amplifier Output Stage.\n\n* Complementary to KTB778.

KEC

Ruggedized 5.0 Display Head Assembly with Backlight

Microchip

微芯科技

RUGGEDIZED 5.6 DISPLAY HEAD ASSEMBLY w/ BACKLIGHT (320 x 234)

Microchip

微芯科技

包装：管件 类别：连接器，互连器件 针座，专用插针 描述：CONN HDR DIP MALE PIN 24POS TIN

Harwin Inc.