丝印：D8；Package：SOD-529；Zener Diode

Features ● High reliability ● Zener Voltage 2.0V~75V

文件：213.4 Kbytes 页数：3 Pages

FS

丝印：D8；Package：SOT8015；50 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

文件：331.58 Kbytes 页数：18 Pages

NEXPERIA

安世

丝印：D8；Package：DFN1110D-3；50 V, 100 mA PNP resistor-equipped transistors

1. General description 100 mA PNP Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEDEC NPN complement: PDTA14

文件：332.18 Kbytes 页数：18 Pages

NEXPERIA

安世

丝印：d8；Package：TSOT-23-5；Low Input Voltage, Low-Dropout 200mA Linear Regulator

文件：556.66 Kbytes 页数：12 Pages

FITIPOWER

天钰科技

丝印：D8；Package：X2SON；LP5907-Q1 Automotive 250-mA, Ultra-Low-Noise, Low-IQ LDO

文件：1.64254 Mbytes 页数：32 Pages

TI

德州仪器

丝印：D8；Package：SOD-523；SILICON PLANAR ZENER DIODES

文件：370.2 Kbytes 页数：3 Pages

YFWDIODE

佑风微

ALKALINE

ALKALINE • Mercury free • Extended operation life • Suitable for use in digital metres, calculators, torches and security equipment • Higher capacity than zinc chloride batteries • Suitable for applications where high intermittent currents are required. NICKEL METAL HYDRIDE NIMH • Rechargea

文件：95.32 Kbytes 页数：1 Pages

DUBILIER

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

GENERAL DESCRIPTION The Am29DL800B is an 8 Mbit, 3.0 volt-only flash memory device, organized as 524,288 words or 1,048,576 bytes. The device is offered in 44-pin SO, 48-pin TSOP, and 48-ball FBGA packages. The word wide (x16) data appears on DQ0–DQ15; the byte-wide (x8) data appears on DQ0–DQ7.

文件：1.38196 Mbytes 页数：46 Pages

AMD

超威半导体

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

GENERAL DESCRIPTION The Am29DL800B is an 8 Mbit, 3.0 volt-only flash memory device, organized as 524,288 words or 1,048,576 bytes. The device is offered in 44-pin SO, 48-pin TSOP, and 48-ball FBGA packages. The word wide (x16) data appears on DQ0–DQ15; the byte-wide (x8) data appears on DQ0–DQ7.

文件：1.38196 Mbytes 页数：46 Pages

AMD

超威半导体

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

GENERAL DESCRIPTION The Am29DL800B is an 8 Mbit, 3.0 volt-only flash memory device, organized as 524,288 words or 1,048,576 bytes. The device is offered in 44-pin SO, 48-pin TSOP, and 48-ball FBGA packages. The word wide (x16) data appears on DQ0–DQ15; the byte-wide (x8) data appears on DQ0–DQ7.

文件：1.38196 Mbytes 页数：46 Pages

AMD

超威半导体