PDTA144EQB

Marking：D8；Package：SOT8015；50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

PDTA144EQB-Q

Marking：D8；Package：DFN1110D-3；50 V, 100 mA PNP resistor-equipped transistors

1.Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinanultrasmallDFN1110D-3(SOT8015) leadlessSurface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEDEC NPNcomplement: PDTA14

FP6161-15S8G

Marking：d8；Package：TSOT-23-5；Low Input Voltage, Low-Dropout 200mA Linear Regulator

LP590730QDQNRQ1

Marking：D8；Package：X2SON；LP5907-Q1 Automotive 250-mA, Ultra-Low-Noise, Low-IQ LDO

MM5Z3V6

Marking：D8；Package：SOD-523；SILICON PLANAR ZENER DIODES

2SD1781A_R1_00001

Marking：D81；Package：SOT-23；NPN Low Vce(sat) Transistor

Features SiliconNPNepitaxialtype LowVce(sat)0.14V(max)@Ic/Ib=1A/100mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

2SD1781A_R2_00001

Marking：D81；Package：SOT-23；NPN Low Vce(sat) Transistor

Features SiliconNPNepitaxialtype LowVce(sat)0.14V(max)@Ic/Ib=1A/100mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

2SD879

Marking：D879；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES InApplicationsWhereTwoNiCdBatteriesareUsedtorovide 2.4V,two2SD879sareused. Thechargetimeisapproximately1secondfasterThanthatof germaniumtransistors. LesspowerdissipationbecauseoflowCollector-to-Emitter VoltageVCE(sat),permittingmoreflashesoflight

2SD879-TA

Marking：D879；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES InApplicationsWhereTwoNiCdBatteriesareUsedtorovide 2.4V,two2SD879sareused. Thechargetimeisapproximately1secondfasterThanthatof germaniumtransistors. LesspowerdissipationbecauseoflowCollector-to-Emitter VoltageVCE(sat),permittingmoreflashesoflight

2SD880

Marking：D880；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES LowFrequencyPowerAmplifier Complementto2SB834