丝印：D75；Package：MSOP；Quad, 12-/14-/16-Bit nanoDACs with 5 ppm/째C On-Chip Reference

文件：843.88 Kbytes 页数：28 Pages

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亚德诺

丝印：D75；Package：MSOP；Quad, 12-/14-/16-Bit nanoDACs with 5 ppm/째C On-Chip Reference

文件：843.88 Kbytes 页数：28 Pages

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亚德诺

丝印：D75；Package：SC70；Single 2-Input NAND Gate With Open-Drain Output

文件：1.55698 Mbytes 页数：34 Pages

TI

德州仪器

丝印：D75；Package：SC70；Single 2-Input NAND Gate With Open-Drain Output

文件：2.50818 Mbytes 页数：38 Pages

TI

德州仪器

丝印：D75；Package：SC70；Single 2-Input NAND Gate With Open-Drain Output

文件：2.50818 Mbytes 页数：38 Pages

TI

德州仪器

丝印：D75；Package：SC70；Single 2-Input NAND Gate With Open-Drain Output

文件：1.55698 Mbytes 页数：34 Pages

TI

德州仪器

丝印：D75；Package：SC70；Single 2-Input NAND Gate With Open-Drain Output

文件：1.55698 Mbytes 页数：34 Pages

TI

德州仪器

丝印：D75；Package：SC70；Single 2-Input NAND Gate With Open-Drain Output

文件：2.50818 Mbytes 页数：38 Pages

TI

德州仪器

丝印：D7509；Package：TO-220C；80A 75V N-channel Enhancement Mode Power MOSFET

Description These N-channel enhancement mode power MOSFETS Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. Features ● Low On Resistance ● Low Gate Charge ● Fast Switching ● Low Reverse Transfer Capacitances ● 1

文件：916.56 Kbytes 页数：11 Pages

ETCList of Unclassifed Manufacturers

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丝印：D752；Package：VQFN；12-BIT, DUAL, ULTRALOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER

1FEATURES 2• 2.7-V to 5.5-V Single Supply • 12-Bit Linearity and Monotonicity • Rail-to-Rail Voltage Output • Settling Time: 5 μs (Max) • Ultralow Glitch Energy: 0.1 nVs • Ultralow Crosstalk: –100 dB • Low Power: 440 μA (Max) • Per-Channel Power Down: 2 μA (Max) • Power-On Reset to Zero S

文件：1.01158 Mbytes 页数：27 Pages

TI

德州仪器