BZX84W-B3V6-Q

Marking：D7；Package：SC-70；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 •Qualifiedaccordingto

BZX884-C30

Marking：D7；Package：DFN1006-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD882(DFN1006-2)leadlessultrasmallSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:Ptot≤250mW •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotolerance

D7V9H1U2LP1610-7

Marking：D7；Package：U-DFN1610-2；7.9 VOLT UNI-DIRECTIONAL HIGH SURGE TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV OneChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3)

D7V9H1U2LP1610Q-7

Marking：D7；Package：U-DFN1610-2；7.9 VOLT UNIDIRECTIONAL HIGH SURGE TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV HighSurgeRobustnessIPP=25Afor8/20sPulse ESD/SurgeProtectionforOnelineUnidirectional 1.6mmx1.0mmU-DFN1610-2PackageSavesBoardSpace HighSurgeProtection TotallyLead-Free&F

NC7ST32L6X

Marking：D7；Package：SIP6；TinyLogic HST 2-Input OR Gate

Description TheNC7ST32isasingle2−InputhighperformanceCMOSOR Gate,withTTL−compatibleinputs.AdvancedSiliconGateCMOS fabricationassureshighspeedandlowpowercircuitoperation.ESD protectiondiodesinherentlyguardbothinputsandoutputwithrespect totheVCCandGNDrails

NZH27C

Marking：D7；Package：SOD123F；Single Zener diodes

1.1Generaldescription General-purposeZenerdiodesinaSOD123FsmallandflatleadSurface-Mounted Device(SMD)plasticpackage. 1.2Features 1.3Applications Generalregulationfunctions Totalpowerdissipation:≤500mWSmallplasticpackagesuitablefor surface-mounteddesign Wid

PDTA143ZQB

Marking：D7；Package：DFN1110D-3；50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

PDTA143ZQB-Q

Marking：D7；Package：DFN1110D-3；50 V, 100 mA PNP resistor-equipped transistors

1.Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinanultrasmallDFN1110D-3(SOT8015) leadlessSurface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEDEC NPNcomplement: PDTA14

PTVS64VP1UTP

Marking：D7；Package：SOD128；High-temperature 600 W Transient Voltage Suppressor

1.1Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatlead Surface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltage protectioninhigh-temperatureapplications. 1.2Featuresandbenefits 1.3Applications Powersup

PTVS64VP1UTP-Q

Marking：D7；Package：SOD128；High-temperature 600 W Transient Voltage Suppressor

1.Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatleadSurface- MountedDevice(SMD)plasticpackage,designedfortransientovervoltageprotectioninhightemperature applications. 2.Featuresandbenefits •Ratedpeakpulsepower:PPPM