BI-DIRECTIONAL TRIGGER DIACS

VBR : 32 - 60 Volts FEATURES : * High current capability * High reliability * Low leakage current * Low power dissipation * Pb / RoHS Free MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 gua

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EIC

BI-DIRECTIONAL TRIGGER DIACS

文件：51.2 Kbytes 页数：1 Pages

EIC

BI-DIRECTIONAL TRIGGER DIACS

文件：82.88 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

丝印：D60P04E；Package：TO-252AA；40V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-20A

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PANJIT

強茂

丝印：D60P03；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

文件：730.25 Kbytes 页数：5 Pages

KERSEMI

丝印：D60P03；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

文件：896.46 Kbytes 页数：5 Pages

HUILIDAShenzhen hui lida electronic co., LTD

汇利达广东汇利达半导体有限公司

丝印：D60P16；Package：TO247-2L；Standard power diode

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WEEN

瑞能半导体