D35NF06L

N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package

Description ThisPowerMOSFEThasbeendevelopedusing STMicroelectronics’uniqueSTripFETprocess, whichisspecificallydesignedtominimizeinput capacitanceandgatecharge.Thisrendersthe devicesuitableforuseasprimaryswitchin advancedhigh-efficiencyisolatedDC-DC converters

STD35NF06

N-channel60V-0.018廓-35A-DPAKSTripFET??IIPowerMOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STD35NF06

N-ChannelMOSFETusesadvancedtrenchtechnology

STD35NF06

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD35NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharg e.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=35A RDS(ON),20mΩ(Typ)@VGS=10V RDS(ON),16mΩ(Typ)@VGS=4.5V AdvancedTrenchTechn

STD35NF06L

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD35NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharg e.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=35A RDS(ON),20mΩ(Typ)@VGS=10V RDS(ON),16mΩ(Typ)@VGS=4.5V AdvancedTrenchTechn

STD35NF06L

N-CHANNEL60V-0.014ohm-35ADPAKSTripFET?줚IMOSFET

Description ThisPowerMOSFEThasbeendevelopedusingSTMicroelectronics’uniqueSTripFETprocess,whichisspecificallydesignedtominimizeinputcapacitanceandgatecharge.Thisrendersthedevicesuitableforuseasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconvertersforte