DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

EL-314

InfraredEmittingDiodes(GaAs)

TheEL-314ahigh-powerGaAsIREDmountedinaclearsidelookingpackage,iscompact,lowprofile,andeasytomount. FEATURES •Compact •Lowprofilepackage •Low-cost •Sidelookingplasticpackage APPLICATIONS •Photointerrupters •Opticalswitches •Toys

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

ESDS314

ESDS31xData-LineSurgeandESDProtectionDiodeArray

1Features •IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge •IEC61000-4-4EFTprotection: –80A(5/50ns) •IEC61000-4-5surgeprotection: –25A(8/20μs) •IOcapacitance: –4.5pF(typical) •DCbreakdownvoltage:5.5V(minimum) •Ultralowleakagec

ESDS314DBVR

Data-LineSurgeandESDProtectionDiodeArray

ESDS314DBVR

Data-LineSurgeandESDProtectionDiodeArray

ESDS314DBVR

ESDS31xData-LineSurgeandESDProtectionDiodeArray

1Features •IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge •IEC61000-4-4EFTprotection: –80A(5/50ns) •IEC61000-4-5surgeprotection: –25A(8/20μs) •IOcapacitance: –4.5pF(typical) •DCbreakdownvoltage:5.5V(minimum) •Ultralowleakagec

EVAL-ADXL314Z

짹200gRange,3-AxisDigitalAccelerometer

GENERALDESCRIPTION TheADXL314isa±200grange,13-bitresolution,3-axisdigital accelerometer.Thedigitaloutputdataisformattedas16-bit,twos complementdataandisaccessiblethroughaserialperipheral interface(SPI),3-wireor4-wire,oranI2Cdigitalinterface. Anintegrated