Pulse Power Diode

Pulse Power Diode

文件：199.22 Kbytes 页数：6 Pages

eupec

NPN SILICON TRANSISTOR

13005 Transistor Chip Manual █ Introduction to the chip Chip size: 4 inches (100mm) Chip code: D260AG-00 Chip thickness: 240±20µm Die size: 2600×2600µm 2 Welding position size: B pole 366×540µm 2 and E pole 292×560µm 2 Electrode metal: aluminum Back metal: silver T

文件：31.61 Kbytes 页数：1 Pages

Huashan

华汕电子器件

Color TV Horizontal Deflection Output Applications

• High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

文件：29.95 Kbytes 页数：4 Pages

SANYO

三洋

Color TV Horizontal Deflection Output Applications

Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

文件：28.06 Kbytes 页数：4 Pages

SANYO

三洋

Color TV Horizontal Deflection Output Applications

Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

文件：30.66 Kbytes 页数：4 Pages

SANYO

三洋

丝印：CD2635T3A；Package：TOP3；TRIACS

APPLICATIONS AC switching Phase control FEATURES  Glass-passivated mesa chip for reliability and uniform  RoHS products  Uniform gate trigger currents in three quadrants

文件：609.57 Kbytes 页数：7 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

LED Based L-864 Red Medium Intensity Beacon for Obstruction Applications

LED Based L-864 Red Medium Intensity Beacon Features & Benefits: Over 90 more efficient than incandescent Resistant to shock and vibration Lasts years longer than an incandescent *Steady burn or Flashes (20-40fpm controller required) 5 year performance warranty FCC Testi

文件：410.98 Kbytes 页数：4 Pages

Dialight

Color TV Horizontal Deflection Output Applications

NPN Triple Diffused Planar Silicon Transistor Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

文件：29.32 Kbytes 页数：4 Pages

SANYO

三洋

Color TV Horizontal Deflection Output Applications

NPN Triple Diffused Planar Silicon Transistor. Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：29.06 Kbytes 页数：4 Pages

SANYO

三洋

1 CHANNEL HIGH SURGE TVS DIODE

Features • Low Profile Package (0.60mm Typical) and Ultra-Small PCB Footprint Area (2.3mm × 1.7mm Max) Suitable for Compact Portable Electronics • Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV • Provides Surge and Lightning Protection per IEC 61000-4-5 Standard:

文件：292.94 Kbytes 页数：5 Pages

DIODES

美台半导体