Silicon NPN triple diffusion planar type Darlington(For power amplification)

For power amplification Complementary to 2SB1470 ■Features •Optimum for 120 W Hi-Fi output •High forward current transfer ratio hFE •Low collector-emitter saturation voltage VCE(sat)

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Panasonic

松下

SWITCHING DIODE

SWITCHING DIODE DESCRIPTION Epitaxial planar Silicon diode FEATURES: High speed. (trr=1.5ns Typ.) Suitable for high packing density layout High reliability. APPLICATION Ultra high speed switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note b

文件：301.6 Kbytes 页数：3 Pages

JIANGSU

长电科技

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

文件：228.5 Kbytes 页数：1 Pages

DCCOM

道全

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose switching and amplifier applications.

文件：228.14 Kbytes 页数：1 Pages

DCCOM

道全