D2017M

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •2.5Vdrive. •Mountheight1.1mm. •Compositetype,facilitatinghigh-densitymounting. •Draincommonspecifications.

D2017UK

METALGATERFSILICONFET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET5W–28V–1GHzSINGLEENDED FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •LOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–13dBMINIMUM APPLICATIONS •VHF/UHFCOMMUNICATIONSfromDCto1GHz

DG2017

Low-Voltage,LowON,DualDPDTAnalogSwitch

DESCRIPTION TheDG2017isadualDPDT(double-pole/double-throw),optimizedforhighperformanceanalogswitching,andspecificallydesignedtobenefitportableaudioapplications. FEATURES •Halogen-freeaccordingtoIEC61249-2-21Definition •Lowvoltageoperation(2Vto5.5V) •Lowon-r

DG2017

Low-Voltage,LowRON,DualDPDTAnalogSwitch

DG2017

Low-Voltage,LowRON,DualDPDTAnalogSwitch

FEATURES •Lowvoltageoperation(2Vto5.5V) •Lowon-resistanceat2.7V-RON: SW1,SW2-3.2 SW3,SW4-0.64 •Fastswitching:tON=46ns tOFF=21ns •QFN-16(4mmx4mm)package •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

DG2017DN

Low-Voltage,LowON,DualDPDTAnalogSwitch

DESCRIPTION TheDG2017isadualDPDT(double-pole/double-throw),optimizedforhighperformanceanalogswitching,andspecificallydesignedtobenefitportableaudioapplications. FEATURES •Halogen-freeaccordingtoIEC61249-2-21Definition •Lowvoltageoperation(2Vto5.5V) •Lowon-r

DW2017

CONTENTS

EEH2017

DC-DCCONVERTER(PIN)

OUTLINE 1.Thisissmallsizeandhighefficientup-downconvertertransformerwhichis2in1construction.(ex.SEPICconverter) 2.Itispossibletooutputthehighvoltagewhichishardtoobtainwithanordinaryinductorwithsufficientaccuracy. 3.ItisavailableforawhiteLEDbacklig

EF2017

GeneralPower&PoETransformerType:EF>series>

EF2017B

GeneralPowerTransformer>Series>