NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain. This is suitable for all kind of driving or muting. FEATURES ● High DC Current Gain and Good hFE linearity. hFE = 800 to 3 200 (VCE = 5.0 V, IC = 1.0 A) ● Low Collector Saturation Voltage.

文件：255.27 Kbytes 页数：4 Pages

NEC

瑞萨

Serial and 6 bit Parallel Interface

文件：2.52973 Mbytes 页数：23 Pages

RENESAS

瑞萨

Spurious Free Design Attenuation Error 0.3 dB @ 2 GHz

文件：2.45306 Mbytes 页数：20 Pages

RENESAS

瑞萨

6-Bit Digital Step Attenuator, 1MHz to 4000MHz

Features ■ Serial and 6-bit Parallel Interface ■ 31.5dB Control Range ■ 0.5dB step ■ Glitch-FreeTM, low transient overshoot ■ 3.0 V to 5.25 V supply ■ 1.8 V or 3.3 V control logic ■ Attenuation Error +60dBm ■ I

文件：1.68389 Mbytes 页数：22 Pages

RENESAS

瑞萨