丝印：D1857；Package：ATV；POWER TRANSISTOR

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：48.13 Kbytes 页数：1 Pages

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丝印：D1858；Package：ATV；Medium Power Transistor (32V, 1A)

Medium Power Transistor (32V, 1A) Features 1) Low VCE(sat) = 0.15V(Typ.) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1132 / 2SB1237

文件：118.61 Kbytes 页数：3 Pages

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丝印：D1858；Package：ATV；Medium Power Transistor (32V, 1A)

Medium Power Transistor (32V, 1A) Features 1) Low VCE(sat) = 0.15V(Typ.) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1132 / 2SB1237

文件：144.94 Kbytes 页数：4 Pages

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丝印：D1859；Package：ATV；Medium Power Amp. Epitaxial Planar NPN Silicon Transistors

Medium Power Amp. Epitaxial Planar NPN Silicon Transistors

文件：207.62 Kbytes 页数：3 Pages

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丝印：D1859；Package：ATV；Medium power transistor (80V, 0.7A)

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：71.05 Kbytes 页数：3 Pages

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丝印：D1859；Package：ATV；MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：42.27 Kbytes 页数：1 Pages

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丝印：D1862；Package：ATV；Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

文件：124.57 Kbytes 页数：4 Pages

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丝印：D1862；Package：ATV；Medium Power Transistor (32V, 2A)

Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor

文件：107.46 Kbytes 页数：4 Pages

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丝印：D1863；Package：SPT/SC-72；Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

文件：89.47 Kbytes 页数：4 Pages

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丝印：D1866；Package：ATV；Medium Power Transistor(Motor, Relay drive) (60짹10V, 2A)

Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to L loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode.

文件：89.73 Kbytes 页数：4 Pages

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