Medium Power Transistor(Motor, Relay drive) (60짹10V, 2A)

Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to L loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode.

文件：89.73 Kbytes 页数：4 Pages

ROHM

罗姆

Integrated Circuit Infrared Preamplifier

Description: The NTE1764 is an infrared preamplifier in a 14–Lead DIP type package and contains four main parts: the gain–controlled amplifier I, the amplifier II, the pulse–separating amplifier III, and the inverter IV. The amplifier I has a wide dynamic range and thus ensures interference

文件：20.79 Kbytes 页数：2 Pages

NTE

SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Dual chip type • Low On-state Resistance RDS(on)1 = 27 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34

文件：38.8 Kbytes 页数：4 Pages

NEC

瑞萨

SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Dual chip type • Low On-state Resistance RDS(on)1 = 27 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34

文件：38.8 Kbytes 页数：4 Pages

NEC

瑞萨