Medium Power Transistor(Motor, Relay drive) (60짹10V, 2A)

Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to L loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode.

文件：89.73 Kbytes 页数：4 Pages

ROHM

罗姆

EPITAXIAL PLANAR NPN SILICON DARLINGTON TRANSISTOR

Features 1) Damper diode is incorporation. 2) Built-in resistance between base and emitter. 3) Full-mold convered fin enables easy insulation from heat sink.

文件：46.89 Kbytes 页数：1 Pages

ROHM

罗姆

200° MiniSeal High-Performance, Immersion-Resistant Crimp Splices

Applications MiniSeal wire-to-wire splicing products are ideal for aerospace and defense applications where performance, reliability or size reduction is essential. Designed to provide an immersion resistant in-line splice on 1:1 wires for the following: wire range from 26 AWG to 12 AWG; nickel-

文件：184.54 Kbytes 页数：2 Pages

TEC

泰科电子

Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

文件：89.47 Kbytes 页数：4 Pages

ROHM

罗姆

NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1780 is high hFE transistor, built-in a zener diode at B-C. It is suitable for use to operate from IC without predriver, such as hammer or motor driver.

文件：142.18 Kbytes 页数：2 Pages

NEC

瑞萨

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

Darlington Transistor(10A NPN)

Darlington Transistor 10A NPN

文件：446.09 Kbytes 页数：9 Pages

SHINDENGEN

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUG

文件：180.27 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 30V - 0.038 - 17A - DPAK/IPAK STripFETII MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：413.42 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Schnelle Gleichrichterdiode Fast Diode

文件：71.06 Kbytes 页数：5 Pages

EUPEC