909 Rahway Avenue

文件：96.85 Kbytes 页数：1 Pages

ADAM-TECH

亚当科技

909 Rahway Avenue

文件：93.13 Kbytes 页数：1 Pages

ADAM-TECH

亚当科技

909 Rahway Avenue

文件：98.44 Kbytes 页数：1 Pages

ADAM-TECH

亚当科技

包装：散装 类别：工具 插拔工具 描述：DIE POINT M5298D5.29

Vector Electronics

丝印：D1733；Package：SOT-428；Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

文件：89.47 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：D1733；Package：SOT-428；Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

文件：112.31 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：D1758；Package：SOT-428；Medium Power Transistor (32V, 2A)

Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor

文件：107.46 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：D1758；Package：SOT-428；Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

文件：124.57 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：D1768S；Package：SPT/SC-72；Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

文件：89.47 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：D1703L；Package：DPAK；N-CHANNEL 30V - 0.038Ω - 17A - DPAK STripFET™ II MOSFET

TYPICAL RDS(on) = 0.038 Ω
APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalan

文件：981.42 Kbytes 页数：10 Pages

STMICROELECTRONICS

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