Low voltage fast-switching NPN power transistor

Description The device is manufactured in NPN Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation volatage ■ High current gain chara

文件：281.1 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Low voltage fast-switching NPN power transistor

ST

意法半导体

SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

INFINEON

英飞凌

5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：D1665C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC™ 650V SiC Schottky Diode

Features  Best in class forward voltage (1.25 V)  Best in class figure of merit (Qc x VF)  High dv/dt ruggedness (150 V/ns) Benefits  System efficiency improvement  System cost and size savings due to the reduced cooling requirements  Enabling higher frequency and increased power de

文件：678.7 Kbytes 页数：9 Pages

INFINEON

英飞凌

丝印：D1665C5；Package：PG-TO220-2；SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：D1665C5；Package：PG-TO220-2；5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

INFINEON

英飞凌