SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

Infineon

英飞凌

5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：D1665C5；Package：PG-TO220-2；SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：D1665C5；Package：PG-TO220-2；5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

Infineon

英飞凌