PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT ● Complement to 2SB1016

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WINGS

永盛电子

Technical Product Specification

文件：669.52 Kbytes 页数：92 Pages

INTEL

英特尔

Technical Product Specification

Intel

英特尔

Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

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IRF

AC/DC Voltage Level Meter

Features and Functions • The LB1407 and LB1417 are based on dB scale and linear scale respectively. • The input level is indicated in the form of a bar by means of 7 red/green LEDs. • The LED current is made variable with an external resistor. • An input amplifier is built in. • A wide range

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SANYO

三洋

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability. ■ 30 MHz ■ 28 VOLTS ■ IMD −30 dB ■ COMMON EMITTER ■ GOLD METALLIZATIO

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STMICROELECTRONICS

意法半导体