Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor    material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on    the switching behavior • No forward recovery • Pb-free lead plating; RoHS com

文件：189.28 Kbytes 页数：7 Pages

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英飞凌

丝印：D12S60；Package：P-TO220-2-2；Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor    material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on    the switching behavior • No forward recovery • Pb-free lead plating; RoHS com

文件：189.28 Kbytes 页数：7 Pages

Infineon

英飞凌

12.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：300.36 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

2ndGeneration thinQ!TM SiC Schottky Diode

文件：250.06 Kbytes 页数：7 Pages

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英飞凌

2nd Generation thinQ SiC Schottky Diode

文件：236.94 Kbytes 页数：7 Pages

Infineon

英飞凌