丝印：D11；Package：DSBGA；LP3986 Dual Micropower 150 mA Ultra Low-Dropout CMOS Voltage Regulators in DSBGA Package

1FEATURES 2• Miniature 8-I/O DSBGA Package • Stable With 1μF Ceramic and High Quality Tantalum Output Capacitors • Fast Turn-on • Two Independent Regulators • Logic Controlled Enable • Over Current and Thermal Protection APPLICATIONS • CDMA Cellular Handsets • GSM Cellular Handsets •

文件：578.06 Kbytes 页数：18 Pages

TI

德州仪器

丝印：D11；Package：DSBGA；LP3986 Dual Micropower 150 mA Ultra Low-Dropout CMOS Voltage Regulators in DSBGA Package

1FEATURES 2• Miniature 8-I/O DSBGA Package • Stable With 1μF Ceramic and High Quality Tantalum Output Capacitors • Fast Turn-on • Two Independent Regulators • Logic Controlled Enable • Over Current and Thermal Protection APPLICATIONS • CDMA Cellular Handsets • GSM Cellular Handsets •

文件：578.06 Kbytes 页数：18 Pages

TI

德州仪器

丝印：D11；Package：SOT-23；SMD Zener

文件：195.91 Kbytes 页数：1 Pages

TAITRON

丝印：D11；Package：SOT-23；SMD Zener

文件：195.91 Kbytes 页数：1 Pages

TAITRON

丝印：D113ES；Package：SPT/SC-72；Digital transistors (built-in resistors)

VCC 50V IC(MAX.) 500mA R1 1kΩ R2 1kΩ Features 1) Built-In Biasing Resistors, R1 = R2 = 1kW. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors（see inner circuit). 3) The bias resistors consist of thin-film r

文件：71.67 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：D113ZS；Package：SPT/SC-72；Digital transistors (built-in resistors)

VCC 50V IC(MAX.) 500mA R1 1kΩ R2 10kΩ Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see innner circuit). 3) The bias resistors consist of thin-film resistors with

文件：77.05 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：D113ES；Package：SC-43A；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

Features * Built-in bias resistors * Simplifies circuit design * 500 mA output current capability * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

文件：245.79 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：D11N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@6A

文件：908.72 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：D11N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@6A

文件：820.13 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：D113ES；Package：SPT/SC-72；500mA / 50V Digital transistors (with built-in resistors)

文件：74.11 Kbytes 页数：3 Pages

ROHM

罗姆