WirelessUSB??LP 2.4 GHz Radio SoC

Functional Description The CYRF6936 WirelessUSB™ LP radio is a second generation member of the Cypress WirelessUSB Radio System-On-Chip (SoC) family. The CYRF6936 is interoperable with the first generation CYWUSB69xx devices. The CYRF6936 IC adds a range of enhanced features, including increase

文件：874.33 Kbytes 页数：40 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2.4 GHz CyFi??Transceiver

Functional Overview The CYRF7936 IC is designed to implement wireless device links operating in the worldwide 2.4 GHz ISM frequency band. It is intended for systems compliant with worldwide regulations covered by ETSI EN 301 489-1 V1.41, ETSI EN 300 328-1 V1.3.1 (Europe), FCC CFR 47 Part 15 (USA

文件：1.25879 Mbytes 页数：21 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2.4 GHz CyFi??Transceiver

Functional Overview The CYRF7936 IC is designed to implement wireless device links operating in the worldwide 2.4 GHz ISM frequency band. It is intended for systems compliant with worldwide regulations covered by ETSI EN 301 489-1 V1.41, ETSI EN 300 328-1 V1.3.1 (Europe), FCC CFR 47 Part 15 (USA

文件：1.25879 Mbytes 页数：21 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mb Static RAM with ECC and RADSTOP™ technology

Features • Temperature ranges - Military/Space: –55°C to 125°C • High speed - tAA = 10 ns • Low active power - ICC = 90 mA at 10 ns (typical) • Low CMOS standby power - ISB2 = 20 mA (typical) • 1.0 V data retention • Automatic power-down when deselected • Transistor-transistor logic (TT

文件：326.21 Kbytes 页数：25 Pages

INFINEON

英飞凌

16-Mb Static RAM with ECC and RADSTOP™ technology

Features • Temperature ranges - Military/Space: –55°C to 125°C • High speed - tAA = 10 ns • Low active power - ICC = 90 mA at 10 ns (typical) • Low CMOS standby power - ISB2 = 20 mA (typical) • 1.0 V data retention • Automatic power-down when deselected • Transistor-transistor logic (TT

文件：326.21 Kbytes 页数：25 Pages

INFINEON

英飞凌

1-Mb parallel F-RAM with RADSTOP™ technology

Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as (64K × 16) or (128K × 8) - High-endurance 10 trillion (1013) reads/writes - 121 year data retention (see “Data retention and endurance” on page 13) - Infineon instant non-volatile write technology - Page-mode

文件：274.89 Kbytes 页数：30 Pages

INFINEON

英飞凌

1-Mb parallel F-RAM with RADSTOP™ technology

Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as (64K × 16) or (128K × 8) - High-endurance 10 trillion (1013) reads/writes - 121 year data retention (see “Data retention and endurance” on page 13) - Infineon instant non-volatile write technology - Page-mode

文件：274.89 Kbytes 页数：30 Pages

INFINEON

英飞凌

512 Mb (64 MB) serial NOR flash SPI/QSPI, 3.3 V, Radiation hardened

Features • Serial Peripheral Interface (SPI) with Multi-I/O - Clock polarity and phase modes 0 and 3 - Quad peripheral interface (QPI) option - Extended addressing: 24- or 32-bit address options • Read - Commands: SPI, Quad I/O - Modes: Quad Data, Quad I/O, QPI, Continuous (XIP) - Serial f

文件：1.32003 Mbytes 页数：135 Pages

INFINEON

英飞凌

512 Mb (64 MB) serial NOR flash SPI/QSPI, 3.3 V, Radiation hardened

Features • Serial Peripheral Interface (SPI) with Multi-I/O - Clock polarity and phase modes 0 and 3 - Quad peripheral interface (QPI) option - Extended addressing: 24- or 32-bit address options • Read - Commands: SPI, Quad I/O - Modes: Quad Data, Quad I/O, QPI, Continuous (XIP) - Serial f

文件：1.32003 Mbytes 页数：135 Pages

INFINEON

英飞凌

512 Mb (64 MB) serial NOR flash SPI/QSPI, 3.3 V, Radiation hardened

Features • Serial Peripheral Interface (SPI) with Multi-I/O - Clock polarity and phase modes 0 and 3 - Quad peripheral interface (QPI) option - Extended addressing: 24- or 32-bit address options • Read - Commands: SPI, Quad I/O - Modes: Quad Data, Quad I/O, QPI, Continuous (XIP) - Serial f

文件：1.32003 Mbytes 页数：135 Pages

INFINEON

英飞凌