1-Mb parallel F-RAM with RADSTOP™ technology

Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as (64K × 16) or (128K × 8) - High-endurance 10 trillion (1013) reads/writes - 121 year data retention (see “Data retention and endurance” on page 13) - Infineon instant non-volatile write technology - Page-mode

文件：274.89 Kbytes 页数：30 Pages

INFINEON

英飞凌

1-Mb parallel F-RAM with RADSTOP™ technology

Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as (64K × 16) or (128K × 8) - High-endurance 10 trillion (1013) reads/writes - 121 year data retention (see “Data retention and endurance” on page 13) - Infineon instant non-volatile write technology - Page-mode

文件：274.89 Kbytes 页数：30 Pages

INFINEON

英飞凌

1-Mbit (64K 횞 16) Automotive F-RAM Memory

文件：471.35 Kbytes 页数：19 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mb parallel F-RAM with RADSTOP™ technology

Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as (64K × 16) or (128K × 8) - High-endurance 10 trillion (1013) reads/writes - 121 year data retention (see “Data retention and endurance” on page 13) - Infineon instant non-volatile write technology - Page-mode

文件：274.89 Kbytes 页数：30 Pages

INFINEON

英飞凌