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CY7C2163KV18数据手册集成电路(IC)的存储器规格书PDF

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厂商型号

CY7C2163KV18

参数属性

CY7C2163KV18 封装/外壳为165-LBGA;包装为托盘;类别为集成电路(IC)的存储器;产品描述:IC SRAM 18MBIT PARALLEL 165FBGA

功能描述

18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

封装外壳

165-LBGA

制造商

Infineon Infineon Technologies AG

中文名称

英飞凌 英飞凌科技股份公司

数据手册

下载地址下载地址二

更新时间

2025-8-7 12:13:00

人工找货

CY7C2163KV18价格和库存,欢迎联系客服免费人工找货

CY7C2163KV18规格书详情

描述 Description

Functional Description
The CY7C2163KV18, and CY7C2165KV18 are 1.8 V synchronous pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to ‘turnaround’ the data bus that exists with common I/O devices.

特性 Features

■ Separate independent read and write data ports
  ❐ Supports concurrent transactions
■ 550-MHz clock for high bandwidth
■ Four-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz
■ Available in 2.5 clock cycle latency
■ Two input clocks (K and K) for precise DDR timing
  ❐ SRAM uses rising edges only
■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems
■ Data valid pin (QVLD) to indicate valid data on the output
■ On-die termination (ODT) feature
  ❐ Supported for D[x:0], BWS[x:0], and K/K inputs
■ Single multiplexed address input bus latches address inputs
for read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ QDR® II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH
■ Operates similar to QDR I device with one cycle read latency when DOFF is asserted LOW
■ Available in × 18, and × 36 configurations
■ Full data coherency, providing most current data
■ Core VDD = 1.8 V± 0.1 V; I/O VDDQ = 1.4 V to VDD [1]
   ❐ Supports both 1.5 V and 1.8 V I/O supply
■ HSTL inputs and variable drive HSTL output buffers
■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■ CY7C2163KV18 offered in Pb-free packages and CY7C2165KV18 offered in non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Phase-locked loop (PLL) for accurate data placement

技术参数

  • 产品编号:

    CY7C2163KV18-550BZXI

  • 制造商:

    Cypress Semiconductor Corp

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,QDR II+

  • 存储容量:

    18Mb(1M x 18)

  • 存储器接口:

    并联

  • 电压 - 供电:

    1.7V ~ 1.9V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    165-LBGA

  • 供应商器件封装:

    165-FBGA(13x15)

  • 描述:

    IC SRAM 18MBIT PARALLEL 165FBGA

供应商 型号 品牌 批号 封装 库存 备注 价格
SPANSION(飞索)
2021+
FBGA-165(13x15)
499
询价
CYPRESS
21+
FBGA165
678
原装现货假一赔十
询价
Cypress
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
CYPRESS
23+
BGA
1110
专注配单,只做原装进口现货
询价
CYPRESS
25+23+
BGA
23462
绝对原装全新正品现货/优势渠道商、原盘原包原盒
询价
INFINEON/英飞凌
23+
PG-BGA-165
28611
为终端用户提供优质元器件
询价
CYPRESS
23+
BGA
1110
专注配单,只做原装进口现货
询价
SPANSION(飞索)
2447
FBGA-165(13x15)
315000
136个/托盘一级代理专营品牌!原装正品,优势现货,长
询价
Cypress
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
CYPRESS/赛普拉斯
2023+
FBGA-165
1360
十五年行业诚信经营,专注全新正品
询价