CY7C1351G集成电路（IC）的存储器规格书PDF中文资料

CY7C1351G属于集成电路（IC）的存储器。由赛普拉斯半导体公司制造生产的CY7C1351G存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Functional Description[1]

The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions.

特性 Features

• Can support up to 133-MHz bus operations with zero wait states

— Data is transferred on every clock

• Pin compatible and functionally equivalent to ZBT™ devices

• Internally self-timed output buffer control to eliminate the need to use OE

• Registered inputs for flow-through operation

• Byte Write capability

• 128K x 36 common I/O architecture

• 2.5V/3.3V I/O power supply (VDDQ)

• Fast clock-to-output times

— 6.5 ns (for 133-MHz device)

• Clock Enable (CEN) pin to suspend operation

• Synchronous self-timed writes

• Asynchronous Output Enable

• Available in lead-free 100-Pin TQFP package, lead-free and non-lead-free 119-Ball BGA package

• Burst Capability—linear or interleaved burst order

• Low standby power