CY7C1340G-200AXI中文资料赛普拉斯数据手册PDF规格书

Functional Description[1]

The CY7C1340G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK).

Features

• Registered inputs and outputs for pipelined operation

• Optimal for performance (Double-Cycle deselect)

— Depth expansion without wait state

• 128K × 32 common I/O architecture

• 3.3V core power supply (VDD)

• 3.3V / 2.5V I/O power supply (VDDQ)

• Fast clock-to-output times

— 2.6 ns (for 250-MHz device)

• Provide high-performance 3-1-1-1 access rate

• User-selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences

• Separate processor and controller address strobes

• Synchronous self-timed writes

• Asynchronous Output Enable

• Available in lead-free 100-Pin TQFP package

• “ZZ” Sleep Mode option