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CY7C1315KV18-250BZC集成电路(IC)的存储器规格书PDF中文资料

| 厂商型号 |
CY7C1315KV18-250BZC |
| 参数属性 | CY7C1315KV18-250BZC 封装/外壳为165-LBGA;包装为托盘;类别为集成电路(IC)的存储器;产品描述:IC SRAM 18MBIT PARALLEL 165FBGA |
| 功能描述 | 18-Mbit QDR짰 II SRAM Four-Word Burst Architecture |
| 封装外壳 | 165-LBGA |
| 文件大小 |
1.22429 Mbytes |
| 页面数量 |
33 页 |
| 生产厂商 | Cypress Cypress Semiconductor |
| 中文名称 | 赛普拉斯 赛普拉斯半导体公司 |
| 网址 | |
| 数据手册 | |
| 更新时间 | 2025-12-12 12:10:00 |
| 人工找货 | CY7C1315KV18-250BZC价格和库存,欢迎联系客服免费人工找货 |
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CY7C1315KV18-250BZC规格书详情
CY7C1315KV18-250BZC属于集成电路(IC)的存储器。由赛普拉斯半导体公司制造生产的CY7C1315KV18-250BZC存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。
Functional Description
The CY7C1311KV18, CY7C1911KV18, CY7C1313KV18, and CY7C1315KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II architecture. QDR II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II architecture has separate data inputs and data outputs to completely eliminate the need to ‘turnaround’ the data bus that exists with common I/O devices.
特性 Features
■ Separate independent read and write data ports
❐ Supports concurrent transactions
■ 333-MHz clock for high bandwidth
■ Four-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 666 MHz) at 333 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two Input Clocks for Output Data (C and C) to minimize Clock skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high speed systems
■ Single multiplexed address input bus latches address inputs for read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ QDR® II operates with 1.5 cycle read latency when DOFF is asserted HIGH
■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW
■ Available in × 8, × 9, × 18, and × 36 configurations
■ Full data coherency, providing most current data
■ Core VDD = 1.8 V (±0.1 V); I/O VDDQ = 1.4 V to VDD
❐ Supports both 1.5 V and 1.8 V I/O supply
■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ Variable drive HSTL output buffers
■ JTAG 1149.1 compatible test access port
■ PLL for accurate data placement
产品属性
更多- 产品编号:
CY7C1315KV18-250BZC
- 制造商:
Cypress Semiconductor Corp
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
易失
- 存储器格式:
SRAM
- 技术:
SRAM - 同步,QDR II
- 存储容量:
18Mb(512K x 36)
- 存储器接口:
并联
- 电压 - 供电:
1.7V ~ 1.9V
- 工作温度:
0°C ~ 70°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
165-LBGA
- 供应商器件封装:
165-FBGA(13x15)
- 描述:
IC SRAM 18MBIT PARALLEL 165FBGA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS |
1219 |
BGA |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Cypress(赛普拉斯) |
2511 |
N/A |
6000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
Cypress |
165-FBGA |
4600 |
Cypress一级分销,原装原盒原包装! |
询价 | |||
SPANSION(飞索) |
2021+ |
FBGA-165(13x15) |
499 |
询价 | |||
Cypress(赛普拉斯) |
21+ |
BGA |
30000 |
只做原装,质量保证 |
询价 | ||
CYPRESS |
23+ |
BGA |
12800 |
公司只有原装 欢迎来电咨询。 |
询价 | ||
Cypress |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
CYPRESSSEMICONDUCTORCORP |
23+ |
165-LBGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
INFINEON/英飞凌 |
23+ |
P-BGA-165 |
28611 |
为终端用户提供优质元器件 |
询价 | ||
CYPRES |
24+ |
NA/ |
54 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 |

