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CY7C1314KV18-333BZC集成电路(IC)的存储器规格书PDF中文资料

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厂商型号

CY7C1314KV18-333BZC

参数属性

CY7C1314KV18-333BZC 封装/外壳为165-LBGA;包装为托盘;类别为集成电路(IC)的存储器;产品描述:IC SRAM 18MBIT PARALLEL 165FBGA

功能描述

18-Mbit QDR짰 II SRAM Two-Word Burst Architecture
IC SRAM 18MBIT PARALLEL 165FBGA

封装外壳

165-LBGA

文件大小

1.35322 Mbytes

页面数量

32

生产厂商

Cypress Cypress Semiconductor

中文名称

赛普拉斯 赛普拉斯半导体公司

网址

网址

数据手册

原厂下载下载地址一下载地址二到原厂下载

更新时间

2025-10-31 16:20:00

人工找货

CY7C1314KV18-333BZC价格和库存,欢迎联系客服免费人工找货

CY7C1314KV18-333BZC规格书详情

CY7C1314KV18-333BZC属于集成电路(IC)的存储器。由赛普拉斯半导体公司制造生产的CY7C1314KV18-333BZC存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Functional Description

The CY7C1312KV18, CY7C1314KV18, and CY7C1910KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II architecture. QDR II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II architecture has separate data inputs and data outputs to completely eliminate the need to ‘turnaround’ the data bus that exists with common I/O devices.

特性 Features

■ Separate independent read and write data ports

❐ Supports concurrent transactions

■ 333 MHz clock for high bandwidth

■ Two-word burst on all accesses

■ Double-data rate (DDR) interfaces on both read and write ports (data transferred at 666 MHz) at 333 MHz

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems

■ Single multiplexed address input bus latches address inputs for both read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR® II operates with 1.5 cycle read latency when DOFF is asserted HIGH

■ Operates similar to QDR I device with one cycle read latency when DOFF is asserted LOW

■ Available in ×8, ×9, ×18, and ×36 configurations

■ Full data coherency, providing most current data

■ Core VDD = 1.8 V (±0.1 V); I/O VDDQ = 1.4 V to VDD

❐ Supports both 1.5 V and 1.8 V I/O supply

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ Variable drive HSTL output buffers

■ JTAG 1149.1 compatible test access port

■ PLL for accurate data placement

产品属性

更多
  • 产品编号:

    CY7C1314KV18-333BZC

  • 制造商:

    Cypress Semiconductor Corp

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,QDR II

  • 存储容量:

    18Mb(512K x 36)

  • 存储器接口:

    并联

  • 电压 - 供电:

    1.7V ~ 1.9V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    165-LBGA

  • 供应商器件封装:

    165-FBGA(13x15)

  • 描述:

    IC SRAM 18MBIT PARALLEL 165FBGA

供应商 型号 品牌 批号 封装 库存 备注 价格
Cypress
165-FBGA
8600
Cypress一级分销,原装原盒原包装!
询价
CYP
25+
DIP-16
18000
原厂直接发货进口原装
询价
CYPRESS(赛普拉斯)
24+
LBGA165
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
CYPRESS
2138+
BGA
8960
专营BGA,QFP原装现货,假一赔十
询价
24+
PLCC
6980
原装现货,可开13%税票
询价
CYP
23+
DIP16
5000
原装正品,假一罚十
询价
Cypress
22+
165FBGA (13x15)
9000
原厂渠道,现货配单
询价
CypressSemiconductorCorp
19+
68000
原装正品价格优势
询价
Cypress Semiconductor Corp
23+
165-FBGA13x15
7300
专注配单,只做原装进口现货
询价
Cypress Semiconductor Corp
24+
165-FBGA(13x15)
56200
一级代理/放心采购
询价