CY7C1145V18中文资料赛普拉斯数据手册PDF规格书

Functional Description

The CY7C1141V18, CY7C1156V18, CY7C1143V18, and CY7C1145V18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II+ architecture. QDR-II+ architecture consists of two separate ports to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR-II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common IO devices. Access to each port is accomplished through a common address bus.

特性 Features

■ Separate Independent read and write data ports

❐ Supports concurrent transactions

■ 300 MHz to 375 MHz clock for high bandwidth

■ 4-Word Burst for reducing address bus frequency

■ Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 750 MHz) at 375 MHz

■ Read latency of 2.0 clock cycles

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Echo clocks (CQ and CQ) simplify data capture in high speed systems

■ Single multiplexed address input bus latches address inputs for both read and write ports

■ Separate Port Selects for depth expansion

■ Data valid pin (QVLD) to indicate valid data on the output

■ Synchronous internally self-timed writes

■ Available in x8, x9, x18, and x36 configurations

■ Full data coherency providing most current data

■ Core VDD = 1.8V ± 0.1V; IO VDDQ = 1.4V to VDD[1]

■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ Variable drive HSTL output buffers

■ JTAG 1149.1 compatible test access port

■ Delay Lock Loop (DLL) for accurate data placement