1M x 4 Static RAM

Functional Description The CY7C1046B is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Features • High speed — tAA = 12 ns • Low active power — 935 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V re

文件：142.89 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 4 Static RAM

Functional Description The CY7C1046B is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Features • High speed — tAA = 12 ns • Low active power — 935 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V re

文件：142.89 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 4 Static RAM

Functional Description The CY7C1046B is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Features • High speed — tAA = 12 ns • Low active power — 935 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V re

文件：142.89 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 4 Static RAM

Functional Description The CY7C1046B is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Features • High speed — tAA = 12 ns • Low active power — 935 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V re

文件：142.89 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 4 Static RAM

Functional Description The CY7C1046B is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Features • High speed — tAA = 12 ns • Low active power — 935 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V re

文件：142.89 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 4 Static RAM

Functional Description The CY7C1046B is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Features • High speed — tAA = 12 ns • Low active power — 935 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V re

文件：142.89 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 4 Static RAM

Functional Description The CY7C1046B is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Features • High speed — tAA = 12 ns • Low active power — 935 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V re

文件：142.89 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 4 Static RAM

Functional Description The CY7C1046BN is a high performance CMOS static RAM organized as 1,048,576 words by 4 bits. Features • Low active power — 825 mW (max) • Low CMOS standby power — 44 mW (max) • 2.0V data retention (400 μW at 2.0V retention) • Automatic power down when deselecte

文件：292.33 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 4 Static RAM

Functional Description The CY7C1046BN is a high performance CMOS static RAM organized as 1,048,576 words by 4 bits. Features • Low active power — 825 mW (max) • Low CMOS standby power — 44 mW (max) • 2.0V data retention (400 μW at 2.0V retention) • Automatic power down when deselecte

文件：292.33 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 4 Static RAM

Functional Description The CY7C1046BV33 is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW (max.) • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention

文件：136.45 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司