256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

文件：187.9 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. • High speed\n• Low active power\n• Low CMOS standby power (Commercial L version)\n• 2.0V Data Retention (600 µW at 2.0V retention)\n• TTL-compatible inputs and outputs\n ;

Infineon

英飞凌

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

文件：187.9 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

文件：187.9 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

文件：187.9 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

文件：187.9 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

文件：187.9 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

文件：187.9 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

文件：187.9 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

文件：187.9 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司