128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options

文件：152 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options

文件：168.76 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 8 Static RAM

Infineon

英飞凌

128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options

文件：152 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options

文件：152 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options

文件：152 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options

文件：152 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options

文件：152 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司