4 Mbit (512K x 8/256K x 16) nvSRAM

Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo

文件：863.54 Kbytes 页数：23 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 Mbit (512K x 8/256K x 16) nvSRAM

Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo

文件：863.54 Kbytes 页数：23 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM

文件：991.18 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times

文件：961.93 Kbytes 页数：25 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司