IL721V

HighIsolationVoltageDigitalIsolators

Features •5000VRMS/7072VPKisolationvoltage(1minute;perUL1577) •1000VRMS/1415VPKworkingvoltage(VIORM)underVDE0884-10 •10kVRMSsurgevoltageunderVDE0884-10 •Hightemperature:−40°Cto+125°C •50kV/μstyp.;30kV/μsmin.commonmodetransientimmunity •Nocarrierorcl

IL721VE

HighSpeedTwo-ChannelDigitalIsolators

Features •Highspeed:150Mbpstypical(S-Series) •Hightemperature:−40°Cto+125°C(T-SeriesandV-Series •6kVRMSReinforcedIsolation;1.2kVRMSWorkingVoltage(V-Series) •2.7to5.5voltsupplyrange •100kV/μsCommonModeTransientImmunity •NocarrierorclockforlowEMIemi

IRF721

N-ChannelPowerMOSFETs,3.0A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS

IRF721

N-CHANNELPOWERMOSFETS

FEATURES •LowerRDS(on) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperationarea •Improvedhightemperaturereliability

IRF721

TRANSISTORSN-CHANNEL

400Volt,1.8OhmHEXFETTO-220ABPlasticPackage TheHEXFET®technologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistor. FEATURES: ■RepetitiveAvalancheRatings ■Dynamicdv/dtRatings ■SimpleDriveRequirement ■EaseofParalleling

IRF721

iscN-ChannelMOSFETTransistor

IRF721

400Volt,1.8OhmHEXFETTO-220ABPlasticPackage

400Volt,1.8OhmHEXFETTO-220ABPlasticPackage TheHEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETssuchasvoltagecontrol,veryfastswitching,easeofparallelingandtemperaturestabilityoftheelectricalparameters. Theyarewellsuitedforapplications

IRF721

N-ChannelPowerMOSFETs

IRF721

N-channelenhancementmodepowermostransistors

IRF721FI

N-channelenhancementmodepowermostransistors