High Speed Two-Channel Digital Isolators

Features • High speed: 150 Mbps typical (S-Series) • High temperature: −40 °C to +125 °C (T-Series and V-Series • 6 kVRMS Reinforced Isolation; 1.2 kVRMS Working Voltage (V-Series) • 2.7 to 5.5 volt supply range • 100 kV/μs Common Mode Transient Immunity • No carrier or clock for low EMI emi

文件：760.91 Kbytes 页数：20 Pages

NVE

6 kV, 125C, 2-Channel (1 each direction) Isolator, Wide SOIC

The IL721VE is a 6 kVrms isolation, 125C, 3.3/5V, two channel, isolated, 110 Mbps, CMOS-compatible logic buffer with automatic level shifting, 10 ns propagation delay, 3 ns pulse width distortion, and 50 kV/microsecond transient immunity. 16-pin wide-body SOIC package with True 8™ mm creepage.

NVE

N-CHANNEL POWER MOSFETS

FEATURES • Lower RDS(on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operation area • Improved high temperature reliability

文件：273.52 Kbytes 页数：5 Pages

SAMSUNG

三星

N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. • Low RDs(on) • VGS

文件：164.92 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

TRANSISTORS N-CHANNEL

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET® technology is the key to International Rectifiers advanced line of power MOSFET transistor. FEATURES: ■ Repetitive Avalanche Ratings ■ Dynamic dv/dt Ratings ■ Simple Drive Requirement ■ Ease of Paralleling

文件：554.36 Kbytes 页数：8 Pages

IRF