CXK581000AM

131072-word x 8-bit High Speed CMOS Static RAM

Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin

CXK581000AM-10LL

131072-word x 8-bit High Speed CMOS Static RAM

Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin

CXK581000AM-10LL

131072-word × 8-bit High Speed CMOS Static RAM; • Fast access time:\nCXK581000ATM/AYM/AM/AP (Access time)\n          -55LL/55SL 55ns (Max.)\n          -70LL/70SL 70ns (Max.)\n          -10LL/10SL 100ns (Max.)\n• Low standby current:\nCXK581000ATM/AYM/AM/AP\n          -55LL/70LL/10LL 20µA (Max.)\n          -55SL/70SL/10SL 12µA (Max.)\n• Low data retention current\nCXK581000ATM/AYM/AM/AP\n         -55LL/70LL/10LL 12µA (Max.)\n         -55SL/70SL/10SL 4µA (Max.)\n• Single +5V supply: +5V ±10%\n• Low voltage data retention: 2.0V (Min.)\n• Broad package line-up\n• CXK581000ATM/AYM 8mm × 20mm 32 pin TSOP package\n• CXK581000AM 525mil 32 pin SOP package\n• CXK581000AP 600mil 32 pin DIP packageFunctions\n131072-word × 8-bit static RAM;

Description\nThe CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits.\nA polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package line-up.\nThe CXK581000ATM/AYM/AM/AP ia a suitable RAM for portable equipment with battery back up.

CXK581000AM-10SL

131072-word x 8-bit High Speed CMOS Static RAM

Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin

CXK581000AM-55LL

131072-word x 8-bit High Speed CMOS Static RAM

Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin

CXK581000AM-55SL

131072-word x 8-bit High Speed CMOS Static RAM

Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin

CXK581000AM-70LL

131072-word x 8-bit High Speed CMOS Static RAM

Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin

CXK581000AM-70SL

131072-word x 8-bit High Speed CMOS Static RAM

Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin

CXK581000AP

131072-word x 8-bit High Speed CMOS Static RAM

Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin

CXK581000AP-10LL

131072-word x 8-bit High Speed CMOS Static RAM

Description TheCXK581000ATM/AYM/AM/APisahighspeedCMOSstaticRAMorganizedas131072-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeedandbroadpackagelin